零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER) HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •Recommendedfor45∼50WAudioFrequency AmplifierOutputStage. •ComplementarytoKTB778. | KECKEC CORPORATION KEC株式会社 | ||
KTD998 | TO-3P Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●HighBreakdownVoltage ●HighCurrentandPowerCapability ●HighPowerAmplifierApplication | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
KTD998 | isc Silicon NPN Power Transistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) •GoodLinearityofhFE •ComplementtoTypeKTB778 APPLICATIONS •Highpoweramplifierapplications •Recommendfor45-50Waudiofrequencyamplifier outputstageapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
TRIPLE DIFFUSED NPN TRANSISTOR | KECKEC CORPORATION KEC株式会社 | |||
ICintendedforuseasaPWMcontroller | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz) Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENS Siemens Ltd | |||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技 | |||
SiliconN_ChannelMOSFETTetrode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor) | SIEMENS Siemens Ltd | |||
SiliconN-channeldual-gateMOS-FETs | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
详细参数
- 型号:
KTD998
- 制造商:
KEC
- 制造商全称:
KEC(Korea Electronics)
- 功能描述:
TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
KEC |
09+ |
TO-3PF |
5 |
现货原装库存热卖 |
询价 | ||
KEC |
08+(pbfree) |
TO-3PF-3 |
8866 |
询价 | |||
KEC |
17+ |
TO-3PF |
6200 |
100%原装正品现货 |
询价 | ||
KEC |
23+ |
TO3P |
8653 |
全新原装优势 |
询价 | ||
KEC |
1816+ |
TO-3P |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
KEC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
KEC |
21+ |
TO-3PF |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
23+ |
N/A |
30650 |
正品授权货源可靠 |
询价 | |||
KEC |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
KEC |
2019 |
TO-3PF |
55000 |
绝对原装正品假一罚十! |
询价 |
相关规格书
更多- KTDC/KDSC
- KTDG-9072QB10Z1S/2
- KTDG-9072SY9Z1S/2
- KTD-INSP6000C/2G
- KTD-L3B/4G
- KTD-LM64
- KTD-PE313ESK3/6G
- KTD-WS667/8G
- KTD-XPS730B/4G
- KTE3001AQ0
- KTE3001AQ6
- KTE3001GQ0
- KTE3001GQ4
- KTE3001GQ7
- KTE3002AQ1
- KTE3002AQ6
- KTE3002GQ0
- KTE3002GQ7
- KTE3005AQ1
- KTE3005AQ6
- KTE3005GQ0
- KTE3005GQ4
- KTE3005GQ7
- KTE3N01AQ1
- KTE3N01AQ6
- KTE3N01GQ0
- KTE3N01GQ4
- KTE3N01GQ7
- KTE3P01AQ1
- KTE3P01AQ6
- KTE3P01GQ0
- KTE3P01GQ4
- KTE3P01GQ7
- KTE6001AL4
- KTE6001AO0
- KTE6001AO6
- KTE6001AQ0
- KTE6001AQ6
- KTE6001AT0
- KTE6001AT6
- KTE6001GL0
- KTE6001GL6
- KTE6001GO0
- KTE6001GO6
- KTE6001GQ0
相关库存
更多- KTD-DM8400B/1G
- KTDG-9072SE9Z1S/2
- KTDG-9072ZG10Z1S/2
- KTD-L3AS/2G
- KTD-LM32
- KTD-LM8
- KTD-PE313LV/16G
- KTD-WS670/4G
- KTD-XPS730BS/2G
- KTE3001AQ1
- KTE3001AQ7
- KTE3001GQ1
- KTE3001GQ6
- KTE3002AQ0
- KTE3002AQ4
- KTE3002AQ7
- KTE3002GQ6
- KTE3005AQ0
- KTE3005AQ4
- KTE3005AQ7
- KTE3005GQ1
- KTE3005GQ6
- KTE3N01AQ0
- KTE3N01AQ4
- KTE3N01AQ7
- KTE3N01GQ1
- KTE3N01GQ6
- KTE3P01AQ0
- KTE3P01AQ4
- KTE3P01AQ7
- KTE3P01GQ1
- KTE3P01GQ6
- KTE6001AL0
- KTE6001AL6
- KTE6001AO4
- KTE6001AO7
- KTE6001AQ4
- KTE6001AQ7
- KTE6001AT4
- KTE6001AT7
- KTE6001GL4
- KTE6001GL7
- KTE6001GO4
- KTE6001GO7
- KTE6001GQ4