KT220A9

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KT521203

Split-Dual Darlington Power Module (30 Amperes/1200 Volts)

Split-DualDarlingtonTransistorModule30Amperes/1200Volts

KT521205

Split-Dual Darlington Transistor Module (50 Amperes/1200 Volts)

Split-DualDarlingtonTransistorModule50Amperes/1200Volts

KT922

Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

KT922A

Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

KT922B

Silizium-HF-Leistungstransistor in Epitaxie-Planar-Technologie

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

KTA200

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEAUTRES •ExcellenthFELinearity :hFE(2)=25(Min.)atVCE=-6V,IC=-400mA. •ComplementarytoKTC200.

KTA200

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features ExcellenthFElinearity,complementarypairwithKTC200. Applications Generalamplifierandswitchingapplication.

KTA2012

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)

SWITCHINGAPPLICATION. FEATURES •ACollectorCurrentisLarge. •CollectorSaturationVoltageislow.:VCE(sat)≤-250mVatIC=-200mA/IB=-10mA. •ComplementarytoKTC4072E.

KTA2012

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)

SWITCHINGAPPLICATION. FEATURES •ACollectorCurrentisLarge. •CollectorSaturationVoltageislow.:VCE(sat)≤-250mVatIC=-200mA/IB=-10mA. •ComplementarytoKTC4072V.

KTA2012E

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)

SWITCHINGAPPLICATION. FEATURES •ACollectorCurrentisLarge. •CollectorSaturationVoltageislow.:VCE(sat)≤-250mVatIC=-200mA/IB=-10mA. •ComplementarytoKTC4072E.

KTA2012V

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)

SWITCHINGAPPLICATION. FEATURES •ACollectorCurrentisLarge. •CollectorSaturationVoltageislow.:VCE(sat)≤-250mVatIC=-200mA/IB=-10mA. •ComplementarytoKTC4072V.

KTA2013F

EPITAXIAL PLANAR PNP TRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity:hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •HighhFE:hFE=120~400. •ComplementarytoKTC4074F. •ThinFinePitchSmallPackage.

KTA2014

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity:hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.),10dB(Max.). •ComplementarytoKTC4075. •SmallPackage.

KTA2014

TRANSISTOR (PNP)

FEATURES •Lowfrequencypoweramplifierapplication •Powerswitchingapplication

KTA2014

-0.15A , -50V PNP Plastic Encapsulated Transistor

FEATURES •Lowfrequencypoweramplifierapplication •Powerswitchingapplication

KTA2014

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •Lowfrequencypoweramplifierapplication •Powerswitchingapplication

KTA2014

PNP Silicon Epitaxial Planar Transistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellenthFELinearity. ●ComplementarytoKTC4075. ●Smallpackage. APPLICATIONS ●Generalpurposeapplicationandswitchingapplication.

KTA2014

SOT-323 Plastic-Encapsulate Transistors

FEATURES Lowfrequencypoweramplifierapplication Powerswitchingapplication

KTA2014E

EPITAXIAL PLANAR PNP TRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity:hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.),10dB(Max.). •ComplementarytoKTC4075E. •SmallPackage.