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MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD3055G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung semiconductor

三星三星半导体

MJE3055

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

产品属性

  • 产品编号:

    KSH3055TM

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    8V @ 3.3A,10A

  • 电流 - 集电极截止(最大值):

    50µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    20 @ 4A,4V

  • 频率 - 跃迁:

    2MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    D-Pak

  • 描述:

    TRANS NPN 60V 10A DPAK

供应商型号品牌批号封装库存备注价格
安森美
21+
12588
原装正品,价格优势量大可定
询价
FSC
6000
面议
19
TO252
询价
三年内
1983
只做原装正品
询价
FAIRCHILD/仙童
2447
TO252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ON
1809+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
询价
ON
23+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-252
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
23+
TO-252
6000
原装正品,支持实单
询价
ON
19+
TO-252
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
TO-252
10000
正规渠道,只有原装!
询价
更多KSH3055TM供应商 更新时间2025-7-19 15:47:00