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2D0N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KECKEC CORPORATION

KEC株式会社

2D0N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KECKEC CORPORATION

KEC株式会社

KHB2D0N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KECKEC CORPORATION

KEC株式会社

KHB2D0N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KECKEC CORPORATION

KEC株式会社

KMB2D0N60SA

N-ChTrenchMOSFET

KECKEC CORPORATION

KEC株式会社

KMB2D0N60SA

N-ChTrenchMOSFET

ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristiscs.ItismainlysuitableforportableforportableequipmentandSMPS.

KECKEC CORPORATION

KEC株式会社

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