KF9N50P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=500V,ID=9A

KF9N50P_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KQB9N50

500VN-ChannelMOSFET

KSM9N50C

500VN-ChannelMOSFET

KSMF9N50CF

500VN-ChannelMOSFET

MDF9N50

N-ChannelMOSFET500V,9.0A,0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MDF9N50BTH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MDF9N50BTH

iscN-ChannelMOSFETTransistor

MDF9N50F

N-ChannelMOSFET500V,8.0A,0.97ohm

MDF9N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC