N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 9A

文件：892.4 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 500V, 9A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 9A

文件：892.4 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

500V N-Channel MOSFET

文件：63.15 Kbytes 页数：2 Pages

KEXIN

科信电子

500V N-Channel MOSFET

文件：2.50539 Mbytes 页数：9 Pages

KERSEMI