N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES · VDSS= 250V, ID= 9.0A · Drai

文件：97.27 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：97.27 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.FEATURES\n· VDSS= 250V, ID= 9.0A\n· Drain-So · VDSS= 250V, ID= 9.0A\n· Drain-Source ON Resistance : RDS(ON)=0.4Ω @VGS = 10V\n· Qg(typ) = 14.5nC;

KEC

250V N-Channel MOSFET

文件：1.85015 Mbytes 页数：7 Pages

KERSEMI

250V N-CHANNEL MOSFET

文件：1.63966 Mbytes 页数：8 Pages

KERSEMI

250V N-Channel MOSFET

文件：1.85015 Mbytes 页数：7 Pages

KERSEMI