KF9N25P数据表ic资料库存现货仙童半导体KEC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
KF9N25P	文件：97.27 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai	KECKEC CORPORATION KEC株式会社
KF9N25P_15	文件：97.27 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR	KECKEC CORPORATION KEC株式会社
9N25	文件：448.98 Kbytes Page：8 Pages	N-ChannelPowerMOSFET	NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司
CEB9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
CEP9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
FQB9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25	文件：724.11 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25	文件：305.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD9N25	文件：927.63 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25TM	文件：752.35 Kbytes Page：8 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP9N25	文件：713.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP9N25	文件：296.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQP9N25C	文件：1.13618 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQPF9N25	文件：731.1 Kbytes Page：8 Pages	250VN-ChannelMOSFET 250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQPF9N25	文件：278.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQPF9N25C	文件：277.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.43Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQPF9N25C	文件：1.13618 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司

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详细参数

型号：
KF9N25P
制造商：
KEC
制造商全称：
KEC(Korea Electronics)
功能描述：
N CHANNEL MOS FIELD EFFECT TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	KF9N40D	KEC		DPAK	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市科恒伟业电子有限公司	KF9N40D	KEC	23+	TO252	6500	只做原装正品现货!或订货假一赔十!	询价
深圳市明嘉莱科技有限公司	KF9N40D	KEC	13+	DPAK	880000	明嘉莱只做原装正品现货	询价
艾睿国际（香港）有限公司	KF9N40D-RTF/H	N/A	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市宝芯创电子有限公司	KF9N40D-RTF/HS	KEC	17+	TO-252	25719	进口原盘现货/3K	询价
深圳市百视威讯电子科技有限公司	KF9N40D-RTF/HS		23+	N/A	46080	正品授权货源可靠	询价
深圳市赛恒电子科技有限公司	KF9N40D-RTF/HS	KEC	21+	TO-252	6688	十年老店,原装正品	询价
贸泽芯城（深圳）电子科技有限公司	KF9N40D-RTF/HS	KEC		DPAK(1)	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
易创佳业科技（深圳）有限公司	KF9N40D-RTF/HS	KEC	23+	TO-252	10880	原装正品，支持实单	询价
深圳市乐峰达科技有限公司	KF9N40D-RTF/HS	KEC	22+	TO-252	8000	原厂原装,实单加微信	询价

更多KF9N25P供应商更新时间2024-4-28 10:45:00

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