N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 6A

文件：1.22673 Mbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：1.22672 Mbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

600V N-Channel MOSFET

文件：2.23424 Mbytes 页数：7 Pages

KERSEMI

Green device available.

文件：659.18 Kbytes 页数：4 Pages

KERSEMI

600V N-Channel MOSFET

文件：1.48918 Mbytes 页数：8 Pages

KERSEMI