NP60N06VDK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06VDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=7.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2400pFTYP.(VDS=25V) Designedforautomotiveapplicationand

NP60N06VLK

60V??60A??N-channelPowerMOSFET

NP60N06VLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06VLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=7.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2400pFTYP.(VDS=25V) Designedforautomotiveapplicationand

NTB60N06

60V,60A,N-ChannelTO-220andD2PAK

NTB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C

NTB60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTB60N06G

N-Channel60-V(D-S)MOSFET

NTB60N06G

60V,60A,N-ChannelTO-220andD2PAK

NTB60N06L

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NTB60N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.