KF13N50PF

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=13A •Dr

KF13N50PSLASHF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=13A •Dr

KSM13N50

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KSM13N50C

500VN-ChannelMOSFET

MDF13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDF13N50B

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDF13N50BTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDF13N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDF13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)