零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
VOICECOILMOTORDRIVER Providingcontrolanddriveofthevoicecoilmotorusedforheadpositioningindiskdriveapplications,theA8958CLBisafull-bridgedriverwhichcanbeconfiguredsothatitsoutputcurrentisadirectfunctionofanexternallyappliedcontrolvoltageorcurrent.Thislinearcurrentcontrolfu | Allegro Allegro MicroSystems | Allegro | ||
8940THRU89258955THRU8961 | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
VOICECOILMOTORDRIVER Providingcontrolanddriveofthevoicecoilmotorusedforheadpositioningindiskdriveapplications,theA8958CLBisafull-bridgedriverwhichcanbeconfiguredsothatitsoutputcurrentisadirectfunctionofanexternallyappliedcontrolvoltageorcurrent.Thislinearcurrentcontrolfu | Allegro Allegro MicroSystems | Allegro | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
NPPAIRENHANCEMENTMODE DESCRIPTION TheAM8958istheN&P-Channelenhancement modepowerfieldeffecttransistorusinghighcell densityDMOStrenchtechnology.Thishighdensity processisespeciallytailoredtominimizeon-state resistanceandprovidesuperiorswitching performance.Thisdeviceisparticularly | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
P&N-Channel32-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■30V,6.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
NP-ChannelMOSFET Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
DualN&P-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualNandP-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
KC8958
- 制造商:
Kings Electronics
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTEL |
22+ |
BGA |
2789 |
原装优势!绝对公司现货! |
询价 | ||
Kings Electronics Co.- Inc. |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
KINGS |
新 |
286 |
全新原装 货期两周 |
询价 | |||
KC-89-87 |
6 |
6 |
询价 | ||||
IILE |
D/C |
DIP |
5 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
FILE |
23+ |
DIP-40P |
18000 |
询价 | |||
FILFACT |
2020+ |
DIP |
1616 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
A |
E331 |
DIP-40 |
871 |
询价 | |||
进口原装 |
23+ |
DIP |
1241 |
特价库存 |
询价 | ||
FILE |
9919 |
DIP40 |
5083 |
询价 |
相关规格书
更多- KC-89-58
- KC-91-01
- KC-98-01
- KC-99-135-M06
- KC-99-18
- KC-99-30
- KCA
- KCA1A11N
- KCA1L11N
- KC-A1N
- KCA1S11N
- KCA2AEA2GBB
- KC-A4N
- KCA810EAPAK10
- KCA-A-1345J
- KCA-A1F
- KCA-A-4220J
- KCA-B-0345J
- KCA-B-0740J
- KCA-C-0300J
- KCA-C-0640J
- KCA-D2F
- KCA-D2K-019
- KCA-D4K
- KCA-E4F
- KCA-E4F-015
- KCA-X9F-006
- KCB-0603
- KCB1-2
- KCB1206
- KCB-123AF
- KCB454//5PCK
- KCB500A1/4
- KCB-500B 1/8
- KCB500B1/8
- KCB-600B
- KCD
- KCD101E105M55A0B00
- KCD101E225M76A0T00
- KCD101E335M76A0T00
- KCD101E475M80A0B00
- KC-D1A
- KC-D1A-300M
- KC-D1N-016
- KC-D1N-104
相关库存
更多- KC-89-59
- KC-91-04
- KC-99-108-M06
- KC-99-14
- KC-99-20
- KC-99-32
- KC-A1A
- KC-A1B
- KCA1L20N
- KCA1S02N
- KC-A2A
- KC-A4A
- KCA810EALPAK10
- KCA-A-0930J
- KCA-A-1920J
- KCA-A-2870J
- KCA-B-0035J
- KCA-B-0490J
- KCA-B-1080J
- KCA-C-0430J
- KCA-C-0940J
- KCA-D2K
- KCA-D4E
- KCA-E4E
- KCA-E4F-013
- KCA-E4FEX
- KCB
- KCB-0805
- KCB1-2.23C
- KCB-1236F
- KCB1300-LC260EUN-SDA1
- KCB-500A 1/8
- KCB500A1/8
- KCB500B1/4
- KCB600B
- KCB600B1/4
- KCD0-SD-EX1.1245
- KCD101E155M55A0B00
- KCD101E226M99C0B00
- KCD101E336M99C0B00
- KCD101E685M80A0B00
- KC-D1A-102
- KCD1L11N
- KC-D1N-103
- KCD1PZ