KTC1003

iscSiliconNPNPowerTransistor

DESCRIPTION •LargeCollectorCurrentCapability- :IC=4A(Max) •CollectorPowerDissipation- :PC=30W(Max) APPLICATIONS •DesignedforB/WTVhorizontaldeflectionoutput applications

KTD1003

EPITAXIALPLANARNPNTRANSISTOR(HIGHCURRENT)

HIGHCURRENTAPPLICATION. FEATURES •HighDCCurrentGain:hFE=800~3200.(VCE=5.0V,IC=300mA). •WideAreaofSafeOperation. •LowCollectorSaturationVoltage:VCE(sat)=0.17V(IC=500mA,IB=5.0mA).

KTD1003

LoadSwitchingApplications

Features •UltraLowOn-Resistance •DualP-ChannelMOSFET •VerySmallSOICPackage •LowProfile(

LB-1003

StripmasterWireStripperBladeSetfor45-092WireStripper

LB1003A

Frequency/CounterInput

LB1003C

Frequency/CounterInput

LB1003PSNME

4Pole&3PoleSwitchedNeutralIP65SteelEnclosedSwitchDisconnectors

LB1003PSNSTB

4Pole&3PoleSwitchedNeutralMetalCladEnclosedSwitchDisconnectors

LD1003S

HighPerformanceN-ChannelPOWERJFETwithSchottkyDiode

[Lovoltech,Inc.] Description ThePowerJFETtransistorfromLovoltechisadevicethatpresentsaLowRdsonallowingforimprovedefficienciesinDCDCswitchingapplications.Thedeviceisdesignedwithalowthresholdsuchthatdriverscanoperateat5V,whichreducesthedriverpowerdissipat

LDW1003

ReedSwitchspecifications

Features •TheLDW-1003isaultraminiaturesingle-contactr•eedswitchdesignedforhighspeedlowlevelswitchingsystems Applications •Automotiveelectronicdevices •RotationandspeedMonitoring •DoorandWindowContactsforSecuritySystem •Communicationequipment •Measurementequipm