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K9F5608Q0C-H中文资料PDF规格书
K9F5608Q0C-H规格书详情
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even thewrite intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
产品属性
- 型号:
K9F5608Q0C-H
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
22+ |
BGA |
360000 |
进口原装房间现货实库实数 |
询价 | ||
SEC |
04+ |
BGA911 |
111 |
询价 | |||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
BGA |
22+ |
16 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG |
2023+ |
BGA |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
20000 |
全新原装 公司现货 价优 |
询价 | ||
SAMSUNG |
23+ |
BGA |
20000 |
原厂原装正品现货 |
询价 | ||
SAMSUNG |
21+ |
BGA |
35210 |
一级代理/放心采购 |
询价 | ||
SAMSUNG |
2022+ |
BGA |
20000 |
只做原装进口现货.假一罚十 |
询价 | ||
SEC |
BGA |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |