K80E08K3规格书应用电路贸易商东芝TOSHIBA-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
K80E08K3	文件：311.32 Kbytes Page：6 Pages	Field Effect Transistor Silicon N Channel MOS Type (U?묺OS?? ■ E-Bike/UPS/Inverter ● Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.) ● High forward transfer admittance : \|Yfs\| = 135 S (typ.) ● Low leakage current : IDSS = 10 µA (max) (VDS = 75 V) ● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 文件：311.32 Kbytes 页数：6 Pages	TOSHIBA 东芝	TOSHIBA
TK80E08K3	文件：311.32 Kbytes Page：6 Pages	Field Effect Transistor Silicon N Channel MOS Type (U?묺OS?? ■ E-Bike/UPS/Inverter ● Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.) ● High forward transfer admittance : \|Yfs\| = 135 S (typ.) ● Low leakage current : IDSS = 10 µA (max) (VDS = 75 V) ● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 文件：311.32 Kbytes 页数：6 Pages	TOSHIBA 东芝	TOSHIBA
K8P3215UQB-DI4B	文件：0 bytes Page：0 Pages	SAM BGA	SAM 上传：深圳市意必达科技有限公司	SAM

更多K80E08K3供应商更新时间2025-10-4 15:01:00