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K7N321801M中文资料三星数据手册PDF规格书
K7N321801M规格书详情
GENERAL DESCRIPTION
The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.
FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A .
• 165FBGA(11x15 ball aray) with body size of 15mmx17mm.
产品属性
- 型号:
K7N321801M
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
1Mx36 & 2Mx18 Pipelined NtRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
0622+ |
TQFP/100 |
9 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMSUN |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
24+ |
TQFP-100 |
4650 |
询价 | |||
SAMSUNG |
23+ |
BGA |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAMSUNG |
6000 |
面议 |
19 |
FBGA |
询价 | ||
SAM |
23+ |
65480 |
询价 | ||||
SAMSUNG |
24+ |
TQFP |
560 |
询价 | |||
SAMSUNG |
24+ |
BGA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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