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K6R1004V1D-KI08中文资料三星数据手册PDF规格书
K6R1004V1D-KI08规格书详情
GENERAL DESCRIPTION
The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004V1D is packaged in a 400 mil 32-pin plastic SOJ.
FEATURES
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating
K6R1004V1D-08: 80mA(Max.)
K6R1004V1D-10: 65mA(Max.)
• Single 3.3±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration :
K6R1004V1D-J : 32-SOJ-400
• Operating in Commercial and Industrial Temperature range.
产品属性
- 型号:
K6R1004V1D-KI08
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Samsung |
23+ |
TSOP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
SAMSUNG/三星 |
1926+ |
SOJ |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG |
2023+ |
SOJ |
50000 |
原装现货 |
询价 | ||
Samsung |
23+ |
TSOP |
28000 |
原装正品 |
询价 | ||
SUNSANG |
22+23+ |
SOJ |
33260 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SAMSUNG |
22+ |
SOP |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
6000 |
面议 |
19 |
DIP/SMD |
询价 | |||
SAMSUNG |
22+ |
SOJ |
5000 |
全新原装现货!自家库存! |
询价 | ||
SAMSUNG |
23+ |
SOJ |
1500 |
专业优势供应 |
询价 | ||
SUNSANG |
23+ |
SOJ |
8000 |
只做原装现货 |
询价 |