MMDT3904

Marking：K6N；Package：SOT363；Dual NPN Silicon Epitaxial Planar Transistor

Features Epitaxialplanardieconstruction ComplimentarytoTPMMDT3906C6 Ultra-smallsurfacemountpackage

MMDT3904

Marking：K6N；Package：SOT-363；Dual NPN Small Signal Surface Mount Transistor

FEATURES •Epitaxialplanardieconstruction. •Idealforlowpoweramplificationandswitching. •Ultra-smallsurfacemountpackage •Alsoavailableinleadfreeversion. APPLICATIONS •Generalswitchingandamplification

MMDT3904DW

Marking：K6N；Package：SOT-363；lastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction Idealforlowpoweramplificationandswitching

NCS20062DTBR2G

Marking：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain−BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

NCV20062DTBR2G

Marking：K62；Package：TSSOP-8；3 MHz, 125 A Low Power Operational Amplifier

TheNCS20061/2/4isafamilyofsingle,dualandquadOperational Amplifiers(OpAmps)with3MHzofGain−BandwidthProduct (GBWP)whileconsumingonly125AofQuiescentcurrentper opamp.TheNCS2006xhasInputOffsetVoltageof4mVandoperates from1.8Vto5.5Vsupplyvoltageoverawi

TK62J60W5

Marking：K62J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK62N60W5

Marking：K62N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=170ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.036Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK62N60X

Marking：K62N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)

TK62Z60X

Marking：K62Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)

TK650A60F

Marking：K650A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.54Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=1.16mA)