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K4H511638D-UC2中文资料三星数据手册PDF规格书
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Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
产品属性
- 型号:
K4H511638D-UC2
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free(RoHS compliant)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2016+ |
TSOP |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SAMSUNG |
24+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMSUNG |
2016+ |
TSOP |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
SAMSUNG/三星 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
SAMSUNG |
23+ |
TSOP |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAMSUNG |
TSOP |
140 |
正品原装--自家现货-实单可谈 |
询价 | |||
SAMSUNG/三星 |
22+ |
TSOP66 |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
08+ |
TSSOP |
1 |
原装现货海量库存欢迎咨询 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
18689 |
询价 | |||
SAMSUNG |
6000 |
面议 |
19 |
DIP/SMD |
询价 |