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K4H511638D-UC2中文资料三星数据手册PDF规格书

K4H511638D-UC2
厂商型号

K4H511638D-UC2

功能描述

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

文件大小

366.45 Kbytes

页面数量

24

生产厂商 Samsung semiconductor
企业简称

SAMSUNG三星

中文名称

三星半导体官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-9 22:58:00

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K4H511638D-UC2价格和库存,欢迎联系客服免费人工找货

K4H511638D-UC2规格书详情

Key Features

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

• LDM,UDM for write masking only (x16)

• DM for write masking only (x4, x8)

• Auto & Self refresh

• 7.8us refresh interval(8K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II Pb-Free package

• RoHS compliant

产品属性

  • 型号:

    K4H511638D-UC2

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free(RoHS compliant)

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2016+
TSOP
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
24+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
SAMSUNG
2016+
TSOP
6523
只做进口原装现货!假一赔十!
询价
SAMSUNG/三星
22+
TSOP
12245
现货,原厂原装假一罚十!
询价
SAMSUNG
23+
TSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
TSOP
140
正品原装--自家现货-实单可谈
询价
SAMSUNG/三星
22+
TSOP66
8000
原装正品支持实单
询价
SAMSUNG
08+
TSSOP
1
原装现货海量库存欢迎咨询
询价
SAMSUNG
23+
TSOP
18689
询价
SAMSUNG
6000
面议
19
DIP/SMD
询价