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K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

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Samsung

K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

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Samsung

K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

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Samsung

K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

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Samsung

K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

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Samsung

K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

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Samsung

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

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Samsung

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

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Samsung

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

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Samsung

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

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Samsung
供应商型号品牌批号封装库存备注价格
samsung
16+
EPM
4000
进口原装现货/价格优势!
询价
SAMSUNG
2017+
BGA
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SAMSANG
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
17+
FBGA
5188
询价
23+
N/A
90750
正品授权货源可靠
询价
SAMSUNG
23+
FBGA
20000
原厂原装正品现货
询价
SAMSUNG
23+
TSOP66
12300
全新原装真实库存含13点增值税票!
询价
SAMSUNG/三星
20+
TSOP66
35830
原装优势主营型号-可开原型号增税票
询价
SAMSUNG
20+
FBGA
11520
特价全新原装公司现货
询价
Samsung
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多K4H510838G-HCCC供应商 更新时间2024-4-20 8:30:00