K4E641612C-TL60资料datasheet下载贸易商-114ic电子网

首页 >K4E641612>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
K4E641612B	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612B-L	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612B-TC	文件：885.22 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：885.22 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-L	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-T	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung
K4E641612C-T45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 页数：36 Pages	Samsung 三星	Samsung

详细参数

型号：
K4E641612
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	K4E641612C-TL60	SAMSUNG	6000	面议	19	TSOP	询价
深圳市宇创芯科技有限公司	K4E641612D	SAMSUNG/三星	24+	TSOP	9600	原装现货,优势供应,支持实单!	询价
深圳市威尔健半导体有限公司	K4E641612D	SAMSUNG/三星	23+	TSOP	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K4E641612D	SAMSUNG/三星	21+	TSOP	10000	原装现货假一罚十	询价
深圳市晨豪科技有限公司	K4E641612D	SAMSUNG/三星	23+	TSOP	89630	当天发货全新原装现货	询价
深圳市得捷芯城科技有限公司	K4E641612D	SAMSUNG/三星	24+	NA/	4250	原装现货,当天可交货,原型号开票	询价
深圳市科芯源微电子有限公司	K4E641612D	SAMSUNG/三星	25+	TSOP	65428	百分百原装现货实单必成	询价
上海磐岳电子有限公司	K4E641612DL50		2023+		5800	进口原装,现货热卖	询价
深圳市益百分电子有限公司	K4E641612D-TC50	SEC	TSOP50		441	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	K4E641612D-TC50		24+	SOP	7003		询价

更多K4E641612供应商更新时间2025-11-4 15:03:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号