K4D263238E-GC25中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

FOR 1M x 32Bit x 4 Bank DDR SDRAM

The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 3.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

FEATURES

• VDD/VDDQ = 2.8V ± 5 for -GC25

• VDD/VDDQ = 2.5V ± 5 for -GC2A/33/36/40/45

• SSTL_2 compatible inputs/outputs

• 4 banks operation

• MRS cycle with address key programs

-. Read latency 3, 4, 5 (clock)

-. Burst length (2, 4, 8 and Full page)

-. Burst type (sequential & interleave)

• Full page burst length for sequential burst type only

• Start address of the full page burst should be even

• All inputs except data & DM are sampled at the positive

going edge of the system clock

• Differential clock input

• No Wrtie-Interrupted by Read Function

• 4 DQS’s ( 1DQS / Byte )

• Data I/O transactions on both edges of Data strobe

• DLL aligns DQ and DQS transitions with Clock transition

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• DM for write masking only

• Auto & Self refresh

• 32ms refresh period (4K cycle)

• 144-Ball FBGA

• Maximum clock frequency up to 400MHz

• Maximum data rate up to 800Mbps/pin