2Gb D-die DDR3L SDRAM

The 2Gb DDR3 SDRAM D-die is organized as a 64Mbit x 4 I/Os x 8banks, 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3

文件：1.74964 Mbytes 页数：64 Pages

Samsung

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DDR3 SDRAM Memory

文件：1.38881 Mbytes 页数：32 Pages

Samsung

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2Gb D-die DDR3L SDRAM

The 2Gb DDR3 SDRAM D-die is organized as a 64Mbit x 4 I/Os x 8banks, 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3

文件：1.74964 Mbytes 页数：64 Pages

Samsung

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2Gb D-die DDR3L SDRAM

The 2Gb DDR3 SDRAM D-die is organized as a 64Mbit x 4 I/Os x 8banks, 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3

文件：1.74964 Mbytes 页数：64 Pages

Samsung

三星

2Gb D-die DDR3L SDRAM

The 2Gb DDR3 SDRAM D-die is organized as a 64Mbit x 4 I/Os x 8banks, 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3

文件：1.74964 Mbytes 页数：64 Pages

Samsung

三星