型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 文件:206.39 Kbytes 页数:6 Pages | TOSHIBA 东芝 | TOSHIBA | ||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 文件:261.5 Kbytes 页数:6 Pages | TOSHIBA 东芝 | TOSHIBA | ||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon 文件:4.63909 Mbytes 页数:28 Pages | Samsung 三星 | Samsung | ||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon 文件:4.63909 Mbytes 页数:28 Pages | Samsung 三星 | Samsung | ||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon 文件:4.63909 Mbytes 页数:28 Pages | Samsung 三星 | Samsung | ||
4Gb D-die DDR4 SDRAM 文件:1.49207 Mbytes 页数:66 Pages | Samsung 三星 | Samsung | ||
PRODUCT SELECTION GUIDE 文件:3.33037 Mbytes 页数:28 Pages | Samsung 三星 | Samsung | ||
PRODUCT SELECTION GUIDE 文件:3.33037 Mbytes 页数:28 Pages | Samsung 三星 | Samsung | ||
4Gb E-die DDR4 SDRAM 文件:1.68979 Mbytes 页数:73 Pages | Samsung 三星 | Samsung | ||
4Gb E-die DDR4 SDRAM 文件:1.68979 Mbytes 页数:73 Pages | Samsung 三星 | Samsung |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
TOSHIBA |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
ROHM/罗姆 |
2511 |
DFN5X6-8 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
3000 |
原装现货 |
询价 | |||||
TOSHIBA |
两年内 |
NA |
200 |
实单价格可谈 |
询价 | ||
TOSHIBA(东芝) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
XMULTIPLE |
2447 |
RJ45 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
Apex |
1824+ |
NA |
16 |
加我QQ或微信咨询更多详细信息, |
询价 |
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