K401

Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

ThesePhotocouplersconsistoftwoGalliumArsenideInfraredEmittingDiodesandaSiliconNPNPhotoDarlingtontransistorperachannel. TheK401hasonechannelina4-pinmini-flatSMDpackage. TheK402hastwochannelsina8-pinmini-flatSMDpackage. TheK404hasfourchanne

K4012

Silicon N-Channel MOS Type Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain−sourceON-resistance:RDS(ON)=0.33Ω(typ.) •Highforwardtransferadmittance:|Yfs|=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4013

Silicon N Channel MOS Type Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=1.35Ω(typ.) •Highforwardtransferadmittance:|Yfs|=5.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=640V) •Enhancement-model:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4017

Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

ChopperRegulator,DC/DCConverterandMotorDriveApplications. 1.4Vgatedrive 2.Lowdrain−sourceON-resistance:RDS(ON)=0.07Ω(typ.) 3.Highforwardtransferadmittance:|Yfs|=6.0S(typ.) 4.Lowleakagecurrent:IDSS=100μA(max)(VDS=60V) 5.Enhancementmode

K402

Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

ThesePhotocouplersconsistoftwoGalliumArsenideInfraredEmittingDiodesandaSiliconNPNPhotoDarlingtontransistorperachannel. TheK401hasonechannelina4-pinmini-flatSMDpackage. TheK402hastwochannelsina8-pinmini-flatSMDpackage. TheK404hasfourchanne

K4032

Vestigial Sideband Filter (IF= 38,0 MHz, standard D, full transmission )

VestigialSidebandFilter (IF=38,0MHz,standardD,fulltransmission) Pinconfiguration 1-Input-ground 2-Input 3-Chipcarrier-ground 4–Output-ground 5-Output

K404

Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

ThesePhotocouplersconsistoftwoGalliumArsenideInfraredEmittingDiodesandaSiliconNPNPhotoDarlingtontransistorperachannel. TheK401hasonechannelina4-pinmini-flatSMDpackage. TheK402hastwochannelsina8-pinmini-flatSMDpackage. TheK404hasfourchanne

K4059

FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

DESCRIPTION TheUTCK4059isanN-channelJFET,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowinputcapacitanceandlowforwardtransferadmittance. FEATURES *Lowforwardtransferadmittance *Lowinputcapacitance

K4059G-B-AQ3-R

FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

DESCRIPTION TheUTCK4059isanN-channelJFET,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowinputcapacitanceandlowforwardtransferadmittance. FEATURES *Lowforwardtransferadmittance *Lowinputcapacitance

K4059L-A-AQ3-R

FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

DESCRIPTION TheUTCK4059isanN-channelJFET,itusesUTC’sadvancedtechnologytoprovidecustomerswithlowinputcapacitanceandlowforwardtransferadmittance. FEATURES *Lowforwardtransferadmittance *Lowinputcapacitance

K4075

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK4075isN-channelMOSFETdesignedforhighcurrentswitchingapplications. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=2900pFT

K4082-S17-AY

N-Channel 650 V (D-S) MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

K4086

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •Highreliability(AdoptionofHVPprocess). •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee.

K4096

N-Channel Silicon MOSFET General-Purpose Switching Device

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)=0.65Ω(typ.) •10Vdrive •InputcapacitanceCiss=600pF

K4098

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •AdoptionofhighreliabilityHVPprocess. •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee.

K40B0J

GLASS PASSIVATED SINGLE

FEATURES *PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Idealforprintedcircuitboards *Glasspassivatedchipjunction *HighSurgeCurrentCapability *HightemperatureSolderingGuaranteed260°C/10Seconds,O.375(9.5mm)leadlength

K40B1J

GLASS PASSIVATED SINGLE

FEATURES *PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Idealforprintedcircuitboards *Glasspassivatedchipjunction *HighSurgeCurrentCapability *HightemperatureSolderingGuaranteed260°C/10Seconds,O.375(9.5mm)leadlength

K40B2J

GLASS PASSIVATED SINGLE

FEATURES *PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Idealforprintedcircuitboards *Glasspassivatedchipjunction *HighSurgeCurrentCapability *HightemperatureSolderingGuaranteed260°C/10Seconds,O.375(9.5mm)leadlength

K40B4J

GLASS PASSIVATED SINGLE

FEATURES *PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Idealforprintedcircuitboards *Glasspassivatedchipjunction *HighSurgeCurrentCapability *HightemperatureSolderingGuaranteed260°C/10Seconds,O.375(9.5mm)leadlength

K40H1203

1200V high speed switching series third generation

Features: TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt