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K2611S

Silicon N-Channel MOSFET

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

K2611SB

Silicon N-Channel MOSFET

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

2611

SMDRFManualTunableInductor

YANTELYantel Corporation

研通高频深圳市研通高频技术有限公司

YANTEL

2611A

2611ABroadbandPhotodiodeModule

Description The2611Aisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

杰尔

agere

2611A

BroadbandPhotodiodeModule

2611ABroadbandPhotodiodeModule The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuits

EMCORE

Emcore Corporation

EMCORE

2611B

2600BSystemSourceMeterSMUInstruments

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX

2611B

2600BSystemSourceMeter®SMUInstruments

KeyFeatures •Tightlyintegrated,4-quadrantvoltage/current sourceandmeasureinstrumentsofferbestinclass performancewith6½-digitresolution •Familyofmodelsofferindustry’swidestdynamic range:10Apulseto0.1fAand200Vto100nV •Built-inwebbrowserbasedsoftwareenabl

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX

AP2611GY-HF

P-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

AP2611GYT-HF

Capableof2.5VGateDrive,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

BU2611A

PLLfrequencysynthesizerfortuners

TheBU2611PLLfrequencysynthesizersworkupthroughtheFMband.Theyfeaturebuilt-inRFampswithlowpowerdissipationandhighsensitivity. Features 1)Built-inhigh-speedprescalercandivide130MHzVCO. 2)InadditiontothereferenceFMandAM,alsooffersthefollowing7frequencies:

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

BU2611AF

PLLfrequencysynthesizerfortuners

TheBU2611PLLfrequencysynthesizersworkupthroughtheFMband.Theyfeaturebuilt-inRFampswithlowpowerdissipationandhighsensitivity. Features 1)Built-inhigh-speedprescalercandivide130MHzVCO. 2)InadditiontothereferenceFMandAM,alsooffersthefollowing7frequencies:

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

BU2611AFS

PLLfrequencysynthesizerfortuners

TheBU2611PLLfrequencysynthesizersworkupthroughtheFMband.Theyfeaturebuilt-inRFampswithlowpowerdissipationandhighsensitivity. Features 1)Built-inhigh-speedprescalercandivide130MHzVCO. 2)InadditiontothereferenceFMandAM,alsooffersthefollowing7frequencies:

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

C2611

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

C2611

TO-251Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

C2611

TRANSISTOR竊?NPN竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

C2611

TRANSISTOR竊?NPN竊

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

C2611

TRANSISTOR(NPN)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

C2611

NPNPowerTransistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

C2611

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:600V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

CSC2611

HighvoltageAmplifierandTVVideoOutput

NPNPLASTICPOWERTRANSISTOR HighvoltageAmplifierandTVVideoOutput

CDIL

CDIL

CDIL

详细参数

  • 型号:

    K2611S

  • 制造商:

    WINSEMI

  • 制造商全称:

    WINSEMI

  • 功能描述:

    Silicon N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
WINSEMI
2019+
TO-247
62500
稳先微WS原装正品假一赔十
询价
VB
2019
TO-247
55000
绝对原装正品假一罚十!
询价
W
23+
TO-247
10000
公司只做原装正品
询价
W
22+
TO-247
6000
十年配单,只做原装
询价
WINSEMI
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
W
23+
TO-247
6000
原装正品,支持实单
询价
st
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
W
22+
TO-247
25000
只做原装进口现货,专注配单
询价
VBSEMI
19+
TO-247
29600
绝对原装现货,价格优势!
询价
W
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
更多K2611S供应商 更新时间2024-4-27 9:20:00