K15A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.24Ω(typ.) •Highforwardtransferadmittance:|Yfs|=7.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

S15A50

SCHOTTKYBARRIERRECTIFIERS(15A,30-60V)

UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal. Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprotectiondiode

S15A50PT

SCHOTTKYBARRIERRECTIFIER

TK15A50D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK15A50D

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(MOS)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.24Ω(typ.) •Highforwardtransferadmittance:|Yfs|=7.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK15A50D

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.24Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

U15A50

FASTRECTIFIERS(15A,300-600V)

UltraFastRecoveryRectifierDiodes

U15A50PT

ULTRAFASTRECTIFIER

VOLTAGERANGE50-600VoltsCURRENT15Amperes FEATURES *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Dualrectifierconstruction,positivecentertap *Glasspassivatedchipjunctions *Lowpowerloss *Lowforwardvoltage,highcurrentcapability