3.2 x 1.5mm Auto Grade Tuning Fork

文件：302.41 Kbytes 页数：3 Pages

FOX

丝印：K13A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：279.35 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications Power MOSFET (N-ch 500V • Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to

文件：190.26 Kbytes 页数：6 Pages

TOSHIBA

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Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：210.8 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K13A50D；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：279.35 Kbytes 页数：6 Pages

TOSHIBA

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丝印：K13A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications Power MOSFET (N-ch 500V • Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to

文件：190.26 Kbytes 页数：6 Pages

TOSHIBA

东芝