首页 >K10A80E>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SCHOTTKYBARRIERRECTIFIERS(10A,70-100V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SchottkyBarrierRectifiers | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
Bi-DirectionalTriodeThyristor | semiWell SemiWell Semiconductor | semiWell | ||
10AmpSiliconRectifiers Features •Lowforwardvoltagedrop •Highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant | TAITRON TAITRON Components Incorporated | TAITRON | ||
MOSFETsSiliconN-ChannelMOS(?-MOS?? | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFETsSiliconN-ChannelMOS Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.46Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.45mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
THYRISTOR-10A800VTO-262 | NIEC Nihon Inter Electronics Corporation | NIEC |
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