首页 >JW1691D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Feature Feature •LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent •HighPowerDissipation:PC=1.3W(Ta=25°C) •ComplementarytoKSB1151 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-126Plastic-EncapsulateTransistors FEATURES LowCollector-EmitterSaturationVoltage&Large CollectorCurrent HighPowerDissipation:PC=1.3W(Ta=25°C) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSILICONPOWERTRANSISTOR DESCRIPTION TheKSD1691isalowVce(sat)transistorwhichhasalarge currentcapabilityandwideSOA ItissuitableforDC-DCconverterordriverofsolenoidor motor. | TGS Tiger Electronic Co.,Ltd | TGS | ||
LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent Feature •LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent •HighPowerDissipation:PC=1.3W(Ta=25°C) •ComplementarytoKSB1151 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollector-EmitterSaturationVoltage&LargeCollectorCurrent ●HighPowerDissipation:PC=1.3W(Ta=25°C) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollectorCurrent-IC=5A •LowCollectorSaturationVoltage:VCE(sat)=0.3V(Max.)@IC=2A •ComplementtoTypeKSB1151 APPLICATIONS •DesignedforuseinDC-DCconverter,ordriverofsolenoidormotor. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent Feature •LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent •HighPowerDissipation:PC=1.3W(Ta=25°C) •ComplementarytoKSB1151 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent Feature •LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent •HighPowerDissipation:PC=1.3W(Ta=25°C) •ComplementarytoKSB1151 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent Feature •LowCollector-EmtterSaturationVoltage&LargeCollectorCurrent •HighPowerDissipation:PC=1.3W(Ta=25°C) •ComplementarytoKSB1151 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-126Plastic-EncapsulateTransistors FEATURES LowCollector-EmitterSaturationVoltage&Large CollectorCurrent HighPowerDissipation:PC=1.3W(Ta=25°C) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
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