75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The JTDB75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for b

文件：131.97 Kbytes 页数：3 Pages

Microsemi

美高森美

75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz

[GHz Technology Inc.] GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input a

文件：230.63 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

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High power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for

文件：233.33 Kbytes 页数：3 Pages

GHZTECH

High power COMMON BASE bipolar transistor.

Microchip

微芯科技

Trans RF BJT NPN 55V 8A 3-Pin Case 55AW-1

NJS

Package：55AW；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 55V 1.215GHZ 55AW

Microsemi

美高森美