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MMD60R900P

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R900PRH

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R900PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R900QRH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R900QRH

Lowpowerlossbyhighspeedswitchingandlowon-resistance

MGCHIP

MagnaChip Semiconductor.

MMIS60R900P

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R900PTH

600V0.9(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R900PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NCE60R900

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NCE60R900D

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

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