首页 >JS2907A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Rad-hard60V,0.6APNPtransistor Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PNPGeneralPurposeAmplifier ■Features ●CollectorCurrenttoContinuous:IC=-600mA ●PowerDissipation:PD=250mW | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
PNPTransistors ■Features ●SmallPackage ●ComplementarytoMMBT2222AT | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.);VCE=-30V,VEB=-0.5V. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.);IC=-150mA,IB=-15mA. •ComplementarytotheKN2222/2222A. | KECKEC CORPORATION KEC株式会社 | KEC | ||
TO-92PACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.);VCE=-30V,VEB=-0.5V. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.);IC=-150mA,IB=-15mA. •ComplementarytotheKN2222/2222A. | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.);VCE=-30V,VEB=-0.5V. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.);IC=-150mA,IB=-15mA. •ComplementarytoKN2222S/AS. | KECKEC CORPORATION KEC株式会社 | KEC |
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