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MS8N50

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF8N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTB8N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB8N50E

TMOSPOWERFET8.0AMPERES500VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTH8N50E

TMOSE-FETHighEnergyPowerFETN-ChannelEnhancement-ModeSiliconGate

TMOSE-FETHighEnergyPowerFET N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET8.0AMPERESrDS(on)=.0.8OHMS500VOLTS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTH8N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTN8N50FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP8N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP8N50E

TMOSPOWERFET8.0AMPERES500VOLTSRDS(on)=0.8OHM

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP8N50E

TMOSPOWERFET8.0AMPERES500VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

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