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JANS2ST3360K中文资料60 V、0.8 A高可靠性NPN-PNP互补晶体管数据手册ST规格书

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厂商型号

JANS2ST3360K

功能描述

60 V、0.8 A高可靠性NPN-PNP互补晶体管

制造商

ST STMicroelectronics

中文名称

意法半导体 意法半导体集团

数据手册

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更新时间

2025-11-2 9:14:00

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JANS2ST3360K规格书详情

描述 Description

The JANS2ST3360K power bipolar transistor is a fast, dual complementary matched device (NPN and PNP) housed in a single Flat-8 hermetic package, intended for aerospace Hi-Rel and Rad-hard applications. ST’s high current density technology ensures high levels of electrical and switching performance. Due to its radiation hardness specific design, the post radiation performance makes it the best in its class. The high switching performance allows this device to be particularly suitable for power MOSFET driver applications. It is qualified in the JANS system as per MIL-PRF19500. In case of mismatches between this datasheet and the specification of the agency, the latter takes precedence.

特性 Features

• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast-switching speed: FT= 130 MHz
• Hermetic package
• JANS qualified

技术参数

  • 制造商编号

    :JANS2ST3360K

  • 生产厂家

    :ST

  • Radiation Level

    :-

  • Agency Qualification

    :-

  • Agency Generic Spec

    :-

  • Hi-Rel Package

    :Flat-8

  • Transistor Polarity

    :NPN-PNP pair

  • Collector-Emitter Voltage_max(V)

    :60

  • IC_max(A)

    :0.8

  • Dc Current Gain_min

    :160

  • Temperature range

    :-65 to 200

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