NPN Silicon Amplifier 100V to 150V, 0.3A to 0.5A

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-P The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 0.5A TO39

Microchip

微芯科技

NPN SILICON TRANSISTOR

文件：69.36 Kbytes 页数：2 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件：69.36 Kbytes 页数：2 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件：69.36 Kbytes 页数：2 Pages

Microsemi

美高森美