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2N6513

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2N6513

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=350V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2N6513

SINPNPOWERBJT

Description:SiNPNPowerBJT,I(C)=5Ato9.9A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N6513

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

2N6513

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage

SEME-LAB

Seme LAB

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