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2N6496

SiliconNPNPowerTransistor

DESCRIPTION ◾HighSpeed-tf=0.5μs(Max) ◾LowSaturationVoltageVCE(sat)=1.0V(Min.)@IC=8A APPLICATIONS ◾Designedforuseinswitchingregulators,inverters,widebandamplifiersandpoweroscillatorsinindustrialandcommercialapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N6496

iscSiliconNPNPowerTransistor

DESCRIPTION ◾HighSpeed-tf=0.5μs(Max) ◾LowSaturationVoltageVCE(sat)=1.0V(Min.)@IC=8A APPLICATIONS ◾Designedforuseinswitchingregulators,inverters,widebandamplifiersandpoweroscillatorsinindustrialandcommercialapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2N6496

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2N6496

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highcollectorcurrentrating •Highpowerdissipationcapability •Wideareaofsafeoperation APPLICATIONS •ForswitchingandamplifiercircuitsinIndustrialandcommercialapplications

SAVANTIC

Savantic, Inc.

2N6496

HIGH-CURRENT,HIGH-POWERHIGH-SPEEDSILICONN-P-NPLANARTRANSISTORS

High-Current,High-PowerHigh-SpeedSiliconN-P-NPlanarTransistors DevicesforSwitchingandAmplifierCircuitinIndustrialandCommercialApplications

GESS

GE Solid State

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