首页 >J2N6496>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconNPNPowerTransistor DESCRIPTION ◾HighSpeed-tf=0.5μs(Max) ◾LowSaturationVoltageVCE(sat)=1.0V(Min.)@IC=8A APPLICATIONS ◾Designedforuseinswitchingregulators,inverters,widebandamplifiersandpoweroscillatorsinindustrialandcommercialapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION ◾HighSpeed-tf=0.5μs(Max) ◾LowSaturationVoltageVCE(sat)=1.0V(Min.)@IC=8A APPLICATIONS ◾Designedforuseinswitchingregulators,inverters,widebandamplifiersandpoweroscillatorsinindustrialandcommercialapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcollectorcurrentrating •Highpowerdissipationcapability •Wideareaofsafeoperation APPLICATIONS •ForswitchingandamplifiercircuitsinIndustrialandcommercialapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
HIGH-CURRENT,HIGH-POWERHIGH-SPEEDSILICONN-P-NPLANARTRANSISTORS High-Current,High-PowerHigh-SpeedSiliconN-P-NPlanarTransistors DevicesforSwitchingandAmplifierCircuitinIndustrialandCommercialApplications | GESS GE Solid State | GESS |
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