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2N6314

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N6314

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N6314

SiliconPNPPowerTransistors

SAVANTIC

Savantic, Inc.

2N6314

COMPLEMENTARYSILICONPOWERTRANSISTORS

CentralCentral Semiconductor Corp

美国中央半导体

2N6314

PowerTransistors

PowerTransistorsTO-66Case

CentralCentral Semiconductor Corp

美国中央半导体

2N6314

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0.

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

2N6314

BipolarPNPDeviceinaHermeticallysealedTO66

BipolarPNPDeviceinaHermeticallysealedTO66MetalPackage. BipolarPNPDevice. VCEO=80V IC=5A

SEME-LAB

Seme LAB

2N6314

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2N6314

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications

SAVANTIC

Savantic, Inc.

2N6314

POWERTRANSISTORS(5A,75W)

COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0.

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

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