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2N5932

BipolarNPNDeviceinaHermeticallysealedTO3

SEME-LAB

Seme LAB

SEME-LAB

2N5932

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2N5932

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
供应商型号品牌批号封装库存备注价格
MOT/RCA
02+
TO-3
364
询价
更多J2N5932供应商 更新时间2024-4-27 15:30:00