N-Channel Enhancement Mode Avalanche Rated

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IXYS

艾赛斯

2nd Generation Trench Gate Power MOSFETs

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N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：297.17 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 44mΩ (Max) • Fast Switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switch-Mode and Resonant-

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：176.62 Kbytes 页数：5 Pages

IXYS

艾赛斯