PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：276.95 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

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