IXTV110N25TS数据手册贸易商无锡固电IXYS-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXTV110N25TS	文件：210.62 Kbytes Page：5 Pages	TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated	IXYS IXYS Integrated Circuits Division	IXYS
IXFH110N25T	文件：145.83 Kbytes Page：5 Pages	TrenchHVPowerMOSFETHiPerFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFV110N25T	文件：191 Kbytes Page：5 Pages	TrenchGatePowerHiperFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFV110N25TS	文件：191 Kbytes Page：5 Pages	TrenchGatePowerHiperFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTH110N25	文件：367.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH110N25T	文件：210.62 Kbytes Page：5 Pages	TrenchTMPowerMOSFETsN-ChannelEnhancementModeAvalancheRated	IXYS IXYS Integrated Circuits Division	IXYS

更多IXTV110N25TS供应商更新时间2024-6-21 14:58:00