Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 200V 72A TO220AB

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艾赛斯

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL94V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier

文件：100.75 Kbytes 页数：4 Pages

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

文件：324.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode

文件：117.64 Kbytes 页数：2 Pages

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艾赛斯