IXTP4N100A规格书应用电路库存现货瑞萨电子-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
4N100-FC	文件：621.96 Kbytes Page：9 Pages	null4.0A,1000VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. FEATURES0 RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A LowReverseTransferCapacitance *FastSwitchingCapabi	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
DAM4N100L	文件：257.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
IXFA4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFA4N100P	文件：333.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFA4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped	IXYS IXYS Integrated Circuits Division	IXYS
IXFA4N100Q	文件：333.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH4N100Q	文件：90.61 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH4N100Q	文件：372.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100	文件：295.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100P	文件：332.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100PM	文件：121.78 Kbytes Page：4 Pages	PolarHiperFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100Q	文件：149.11 Kbytes Page：4 Pages	HiperFETPowerMOSFETsQ-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped	IXYS IXYS Integrated Circuits Division	IXYS
IXFP4N100QM	文件：116.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETQ-Class	IXYS IXYS Integrated Circuits Division	IXYS
IXFR4N100Q	文件：81.23 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFR4N100Q	文件：370.08 Kbytes Page：3 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IXTP4N100A	IXYS	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳兆威电子有限公司	IXTP4N100A	IXYS	20+	TO-220	90000	全新原装正品/库存充足	询价
深圳市河锋鑫科技有限公司	IXTP4N100A	IXYS/艾赛斯	22+	TO-220	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	IXTP4N100A	IXYS/艾赛斯	23+	TO-220	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	IXTP4N100A	IXYS/艾赛斯	22+	TO-220	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	IXTP4N100A	IXYS-艾赛斯	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市科芯源微电子有限公司	IXTP4N100A	IXYS/艾赛斯	24+	TO220	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市一线半导体有限公司	IXTP4N100Q		08+(pbfree)		8866		询价
深圳市永贝尔科技有限公司	IXTP4N45	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市威尔健半导体有限公司	IXTP4N45	ON/安森美	23+	TO-252	69820	终端可以免费供样,支持BOM配单!	询价

更多IXTP4N100A供应商更新时间2024-6-19 15:05:00

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