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IXFK27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK27N80

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK27N80

HiPerFETTMPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti

IXYS

IXYS Corporation

IXFK27N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFN27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN27N80

HiPerFETTMPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80Q

HiPerFETPowerMOSFETsQ-Class

SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •EpoxymeetUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •IXYSadvancedlowQgprocess •Ruggedpolysilicongatecellstructure

IXYS

IXYS Corporation

IXFR27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti

IXYS

IXYS Corporation

IXFX27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX27N80Q

HiPerFETPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFX27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti

IXYS

IXYS Corporation

供应商型号品牌批号封装库存备注价格
IXYS
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
IXYS
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IXYS
16+
SOT227
2100
公司大量全新现货 随时可以发货
询价
IXYS
24+
SOT227
2000
进口原装现货假一罚十.价格优势.热卖中..
询价
IXYS
22+
SOT227
8000
原装正品支持实单
询价
IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
询价
IXYS
23+
30A1000V
800
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
IXYS
23+
MOSFETN-CH1000V30ASOT-22
1700
专业代理销售半导体模块,能提供更多数量
询价
IXYS
10+
主营模块
85
原装正品,公司正品供应
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IXTN27N80供应商 更新时间2024-9-25 17:30:00