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IXTM67N10

MegaMOSFET

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXYS

IXTM67N10

MegaMOS FET

IXYS

IXYS Integrated Circuits Division

IXYS

IXTM67N10

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFH67N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

IXFH67N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

IXFH67N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=67A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=25mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFM67N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=67A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXFM67N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

IXFM67N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

IXFZ67N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXYS

IXTH67N10

MegaMOSFET

IXYS

IXYS Integrated Circuits Division

IXYS

IXTH67N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTH67N10

MegaMOSFET

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXYS

详细参数

  • 型号:

    IXTM67N10

  • 制造商:

    IXYS

  • 制造商全称:

    IXYS Corporation

  • 功能描述:

    MegaMOSFET

供应商型号品牌批号封装库存备注价格
IXYS
02+
TO-3
86
询价
IXYS
1635+
TO-3
6000
好渠道!好价格!一片起卖!
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS/艾赛斯
专业铁帽
TO-3
100
原装铁帽专营,代理渠道量大可订货
询价
IXYS
20+
TO3
35830
原装优势主营型号-可开原型号增税票
询价
IXYS
2023+
TO-204
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IXYS
21+
TO-204
35210
一级代理/放心采购
询价
IXYS
22+
35000
OEM工厂,中国区10年优质供应商!
询价
IXYS
2022+
TO-204AE
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
isc
2024
TO-3
5000
国产品牌isc,可替代原装
询价
更多IXTM67N10供应商 更新时间2024-4-28 13:30:00