IXTH26N50A规格书行情报价矽莱克电子IXYS-114ic电子网

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26N50	文件：187.53 Kbytes Page：6 Pages	26A,500VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC26N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
IXFC26N50	文件：67.47 Kbytes Page：2 Pages	HiPerFETMOSFETsISOPLUS220 ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFC26N50	文件：323.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC26N50P	文件：323.8 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC26N50P	文件：180.81 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFETISOPLUS220 N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters	IXYS IXYS Integrated Circuits Division	IXYS
IXFH26N50	文件：336.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH26N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH26N50	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH26N50P	文件：211.72 Kbytes Page：5 Pages	AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230mΩ trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou	IXYS IXYS Integrated Circuits Division	IXYS
IXFH26N50P	文件：337.45 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH26N50Q	文件：337.14 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH26N50Q	文件：134.05 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification	IXYS IXYS Integrated Circuits Division	IXYS
IXFM26N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM26N50	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM26N50	文件：316.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP26N50	文件：295.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ26N50	文件：312.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR26N50	文件：329.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR26N50	文件：34.31 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFR26N50Q	文件：79.56 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	IXTH26N50A	IXYS	16+	TO-247	2100	公司大量全新现货随时可以发货	询价
深圳市兴灿科技有限公司	IXTH26N50A	IXYS	23+	TO-247	2000	进口原装现货假一罚十.价格优势.热卖中..	询价
深圳兆威电子有限公司	IXTH26N50功率三极管	IXYS/艾赛斯	23+	TO-3P	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市恒创达实业有限公司	IXTH26N60P	IXYS	17+	TO-3P	6200		询价
深圳市一线半导体有限公司	IXTH26N60P	IXYS	08+(pbfree)	TO-247	8866		询价
深圳市振宏微科技有限公司	IXTH26N60P	IXYS	23+	TO-3P	5000	专做原装正品,假一罚百!	询价
上海市鑫鸿达电子	IXTH26N60P	IXYS/艾赛斯	2022+		30	全新原装货期两周	询价
深圳市艾宇欣科技有限公司	IXTH26N60P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXTH26N60P	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXTH26N60P	I	23+	TO-247	10000	公司只做原装正品	询价

更多IXTH26N50A供应商更新时间2024-6-18 17:16:00

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