首页 >IXTH21N60A>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimpledrive requirement •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategorizati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.32Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •IncreasedrobustnessduetolowQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:forde | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
IXYS |
23+ |
TO-247 |
2000 |
进口原装现货假一罚十.价格优势.热卖中.. |
询价 | ||
IXYS |
07+/08+ |
TO-247 |
88 |
询价 | |||
IXYS |
2019+ |
TO-247-3 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IXYS |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
21+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
2022+ |
TO-247 |
79999 |
询价 |
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