| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperJunctionPowerMOSFETII | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimpledrive requirement •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategorizati | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技 | Vishay | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.32Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb) | VishayVishay Siliconix 威世科技 | Vishay | ||
SMPSMOSFET FEATURES •SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. •LowerGatechargeresultsinsimpledriverequirements. •EnhanceddV/dtcapabilitiesofferimprovedruggedness. •HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS •Zero | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •IncreasedrobustnessduetolowQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:forde | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
IXTH21N60
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | TO-218VAR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
05+ |
原厂原装 |
4307 |
只做全新原装真实现货供应 |
询价 | ||
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
IXYS |
23+ |
TO-247 |
2000 |
进口原装现货假一罚十.价格优势.热卖中.. |
询价 | ||
IXYS/艾赛斯 |
21+ROHS |
TO247 |
29042 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
isc |
2024 |
TO-247 |
200 |
国产品牌isc,可替代原装 |
询价 | ||
IXYS |
07+/08+ |
TO-247 |
88 |
询价 | |||
IXYS |
2019+ |
TO-247-3 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IXYS |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
21+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
更多- IXTH220N055T
- IXTH22N50P
- IXTH22P20
- IXTH23N25MA
- IXTH240N055T
- IXTH24N50L
- IXTH24P20
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- IXTH28N50Q
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- IXTH50P085
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- IXTH5N100A
- IXTH5N95A
- IXTH60N15
- IXTH60N25
- IXTH62N25T
- IXTH67N08MA
- IXTH67N10
- IXTH67N10MB
- IXTH68P20T
- IXTH6N120
- IXTH6N50D2
- IXTH6N80A
- IXTH6N90A
- IXTH72N20T
- IXTH74N15T
- IXTH75N10
- IXTH75N15
- IXTH76P10T
- IXTH7P50
- IXTH86N20T
- IXTH88N30P
相关库存
更多- IXTH220N075T
- IXTH22P15
- IXTH230N085T
- IXTH23N25MB
- IXTH24N50
- IXTH24N50Q
- IXTH26N60P
- IXTH280N055T
- IXTH2N170D2
- IXTH300N04T2
- IXTH30N50
- IXTH30N50L2
- IXTH35N30
- IXTH36N20T
- IXTH36P10
- IXTH39N08MA
- IXTH39N10MA
- IXTH3N100P
- IXTH3N150
- IXTH50N20
- IXTH50N30
- IXTH50P10
- IXTH54N30T
- IXTH5N100
- IXTH5N95
- IXTH60N10
- IXTH60N20L2
- IXTH60N30T
- IXTH67N08
- IXTH67N08MB
- IXTH67N10MA
- IXTH68N20
- IXTH6N100D2
- IXTH6N150
- IXTH6N80
- IXTH6N90
- IXTH72N20
- IXTH72N30T
- IXTH75N08
- IXTH75N10L2
- IXTH76N25T
- IXTH7P45
- IXTH80N20L
- IXTH88N15
- IXTH8P45
