N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

Littelfuse

力特

TrenchMVTM Power MOSFET

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 280A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and ABS System

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：146.94 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated

文件：301 Kbytes 页数：5 Pages

IXYS

艾赛斯